This work presents a comprehensive modeling strategy for advanced large-size AlGaN/GaN HEMTs. A 22-element equivalent circuit with 12 extrinsic elements, including 6 capacitances, serves as small-signal model and as basis for a large-signal model. Analysis of such capacitances leads to original equations, employed to form capacitance ratios. Basic assumptions of existing parameter extractions for 22-element equivalent circuits are perfected: A) Required capacitance ratios are evaluated with device's top-view images. B) Influences of field plates and source air-bridges on these ratios are considered. The large-signal model contains a gate charge's non-quasi-static model and a dispersive-IDS model. The extrinsic-to-intrinsic voltage transformation needed to calculate non-quasi-static parameters from small-signal parameters is improved with a new description for the measurement's boundary bias points. All IDS-model parameters, including time constants of charge-trapping and self-heating, are extracted using pulsed-DC IV and IDS-transient measurements, highlighting the modeling strategy's empirical character.
Produktkennzeichnungen
ISBN-10
3862193640
ISBN-13
9783862193646
eBay Product ID (ePID)
211933518
Produkt Hauptmerkmale
Produktart
Lehrbuch
Sprache
Englisch
Anzahl der Seiten
255 Seiten
Verlag
Kassel University Press Gmbh, Kassel University Press
Publikationsname
Device Characterization And Modeling of Large-Size Gan Hemts
Autor
Jaime Alberto Zamudio Flores
Format
Taschenbuch
Erscheinungsjahr
2012
Zusätzliche Produkteigenschaften
Hörbuch
No
Item Length
20cm
Item Height
1cm
Item Width
15cm
Item Weight
341g
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