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Multiband effektive Massenannäherungen: Fortgeschrittene mathematische Modelle und Zahlen-
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eBay-Artikelnr.:364688672071
Artikelmerkmale
- Artikelzustand
- ISBN-13
- 9783319014265
- Book Title
- Multi-Band Effective Mass Approximations
- ISBN
- 9783319014265
- Subject Area
- Mathematics, Science
- Publication Name
- Multi-Band Effective Mass Approximations
- Publisher
- Springer International Publishing A&G
- Item Length
- 9.3 in
- Subject
- Physics / Quantum Theory, Numerical Analysis, Physics / Mathematical & Computational, Optimization
- Publication Year
- 2014
- Series
- Lecture Notes in Computational Science and Engineering Ser.
- Type
- Textbook
- Format
- Hardcover
- Language
- English
- Item Weight
- 225.3 Oz
- Item Width
- 6.1 in
- Number of Pages
- Xvi, 318 Pages
Über dieses Produkt
Product Identifiers
Publisher
Springer International Publishing A&G
ISBN-10
3319014269
ISBN-13
9783319014265
eBay Product ID (ePID)
169513231
Product Key Features
Number of Pages
Xvi, 318 Pages
Language
English
Publication Name
Multi-Band Effective Mass Approximations
Subject
Physics / Quantum Theory, Numerical Analysis, Physics / Mathematical & Computational, Optimization
Publication Year
2014
Type
Textbook
Subject Area
Mathematics, Science
Series
Lecture Notes in Computational Science and Engineering Ser.
Format
Hardcover
Dimensions
Item Weight
225.3 Oz
Item Length
9.3 in
Item Width
6.1 in
Additional Product Features
Intended Audience
Scholarly & Professional
Dewey Edition
23
Series Volume Number
94
Number of Volumes
1 vol.
Illustrated
Yes
Dewey Decimal
515
Table Of Content
Introduction.- Part I: Physical Models.- Part II: Numerical Methods.- Part III: Applications.- Part IV: Advanced Mathematical Topics.
Synopsis
Introduction.- Part I: Physical Models.- Part II: Numerical Methods.- Part III: Applications.- Part IV: Advanced Mathematical Topics., This book addresses several mathematical models from the most relevant class of kp-Schrödinger systems. Both mathematical models and state-of-the-art numerical methods for adequately solving the arising systems of differential equations are presented. The operational principle of modern semiconductor nano structures, such as quantum wells, quantum wires or quantum dots, relies on quantum mechanical effects. The goal of numerical simulations using quantum mechanical models in the development of semiconductor nano structures is threefold: First they are needed for a deeper understanding of experimental data and of the operational principle. Secondly, they allow us to predict and optimize in advance the qualitative and quantitative properties of new devices in order to minimize the number of prototypes needed. Semiconductor nano structures are embedded as an active region in semiconductor devices. Thirdly and finally, the results of quantum mechanical simulations of semiconductor nano structures can be used with upscaling methods to deliver parameters needed in semi-classical models for semiconductor devices, such as quantum well lasers. This book covers in detail all these three aspects using a variety of illustrative examples. Readers will gain detailed insights into the status of the multiband effective mass method for semiconductor nano structures. Both users of the kp method as well as advanced researchers who want to advance the kp method further will find helpful information on how to best work with this method and use it as a tool for characterizing the physical properties of semiconductor nano structures. The book is primarily intended for graduate and Ph.D. students in applied mathematics, mathematical physics and theoretical physics, as well as all those working in quantum mechanical research or the semiconductor / opto-electronic industry who are interested in new mathematical aspects., This book addresses several mathematical models from the most relevant class of kp-Schrodinger systems. Both mathematical models and state-of-the-art numerical methods for adequately solving the arising systems of differential equations are presented. The operational principle of modern semiconductor nano structures, such as quantum wells, quantum wires or quantum dots, relies on quantum mechanical effects. The goal of numerical simulations using quantum mechanical models in the development of semiconductor nano structures is threefold: First they are needed for a deeper understanding of experimental data and of the operational principle. Secondly, they allow us to predict and optimize in advance the qualitative and quantitative properties of new devices in order to minimize the number of prototypes needed. Semiconductor nano structures are embedded as an active region in semiconductor devices. Thirdly and finally, the results of quantum mechanical simulations of semiconductor nano structures can be used with upscaling methods to deliver parameters needed in semi-classical models for semiconductor devices, such as quantum well lasers. This book covers in detail all these three aspects using a variety of illustrative examples. Readers will gain detailed insights into the status of the multiband effective mass method for semiconductor nano structures. Both users of the kp method as well as advanced researchers who want to advance the kp method further will find helpful information on how to best work with this method and use it as a tool for characterizing the physical properties of semiconductor nano structures. The book is primarily intended for graduate and Ph.D. students in applied mathematics, mathematical physics and theoretical physics, as well as all those working in quantum mechanical research or the semiconductor / opto-electronic industry who are interested in new mathematical aspects.
LC Classification Number
QA71-90
Artikelbeschreibung des Verkäufers
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