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Controlling CoSi2 formation temperature by reactive deposition von Hind Ali Ahmed (2010, Taschenbuch)
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Artikelzustand:
If the substrate temperature is maintained above 550°C a CoSi2 film is produced, while at substrate temperatures below 500°C the film is in the form of CoSi. The results of the investigation show that the temperature at which the reactive deposition was carried out had a significant effect on the formation temperature of CoSi2: the lower the reactive deposition temperature used to form the CoSi film, the higher the subsequent formation temperature of CoSi2.
