Produktinformation
This book explores integrated gate drivers with emphasis on new gallium nitride (GaN) power transistors, which offer fast switching along with minimum switching losses. It serves as a comprehensive, all-in-one source for gate driver IC design, written in handbook style with systematic guidelines. The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors. Solutions are presented on the system and circuit level for highly integrated gate drivers. Coverage includes miniaturization by higher integration of subfunctions onto the IC (buffer capacitors), as well as more efficient switching by a multi-level approach, which also improves robustness in case of extremely fast switching transitions. The discussion also includes a concept for robust operation in the highly relevant case that the gate driver is placed in distance to the power transistor. All results are widely applicable to achieve highly compact, energy efficient, and cost-effective power electronics solutions.¿Produktkennzeichnungen
ISBN-103030689395
ISBN-139783030689391
eBay Product ID (ePID)24054114473
Produkt Hauptmerkmale
VerlagSpringer International Publishing
Erscheinungsjahr2021
Anzahl der Seiten144 Seiten
PublikationsnameHighly Integrated Gate Drivers For Si And Gan Power Transistors
SpracheEnglisch
ProduktartLehrbuch
AutorBernhard Wicht
FormatGebundene Ausgabe
Zusätzliche Produkteigenschaften
HörbuchNo
MitautorAchim Seidel
InhaltsbeschreibungHc Runder Rücken Kaschiert
Item Height1cm
Item Length24cm
AusgabeAusgabe Nr. 1 des Jahres 21
Item Weight389g
Item Width16cm